Physical & Logical Attributes
Fundamental Memory Class: | DDR4 SDRAM |
Module Speed Grade: | DDR4-2133P downbin |
Base Module Type: | UDIMM (133,35 mm) |
Module Capacity: | 16 GB |
Reference Raw Card: | B0 (8 layers) |
JEDEC Raw Card Designer: | Micron Technology |
Module Nominal Height: | 31 < H <= 32 mm |
Module Thickness Maximum, Front: | 1 < T <= 2 mm |
Module Thickness Maximum, Back: | 1 < T <= 2 mm |
Number of DIMM Ranks: | 2 |
Address Mapping from Edge Connector to DRAM: | Mirrored |
DRAM Device Package: | Standard Monolithic |
DRAM Device Package Type: | 78-ball FBGA |
DRAM Device Die Count: | Single die |
Signal Loading: | Not specified |
Number of Column Addresses: | 10 bits |
Number of Row Addresses: | 16 bits |
Number of Bank Addresses: | 2 bits (4 banks) |
Bank Group Addressing: | 2 bits (4 groups) |
DRAM Device Width: | 8 bits |
Programmed DRAM Density: | 8 Gb |
Calculated DRAM Density: | 8 Gb |
Number of DRAM components: | 16 |
DRAM Page Size: | 1 KB |
Primary Memory Bus Width: | 64 bits |
Memory Bus Width Extension: | 0 bits |
DRAM Post Package Repair: | Not supported |
Soft Post Package Repair: | Not supported |
DRAM Timing Parameters
Fine Timebase: | 0,001 ns |
Medium Timebase: | 0,125 ns |
CAS Latencies Supported: | 9T, 10T, 11T, 12T, 13T, 14T, 15T, 16T |
Minimum Clock Cycle Time (tCK min): | 0,938 ns (1066,10 MHz) |
Maximum Clock Cycle Time (tCK max): | 1,500 ns (666,67 MHz) |
CAS# Latency Time (tAA min): | 13,500 ns |
RAS# to CAS# Delay Time (tRCD min): | 13,500 ns |
Row Precharge Delay Time (tRP min): | 13,500 ns |
Active to Precharge Delay Time (tRAS min): | 33,000 ns |
Act to Act/Refresh Delay Time (tRC min): | 46,500 ns |
Normal Refresh Recovery Delay Time (tRFC1 min): | 350,000 ns |
2x mode Refresh Recovery Delay Time (tRFC2 min): | 260,000 ns |
4x mode Refresh Recovery Delay Time (tRFC4 min): | 160,000 ns |
Short Row Active to Row Active Delay (tRRD_S min): | 3,701 ns |
Long Row Active to Row Active Delay (tRRD_L min): | 5,300 ns |
Long CAS to CAS Delay Time (tCCD_L min): | 5,356 ns |
Four Active Windows Delay (tFAW min): | 23,000 ns |
Maximum Active Window (tMAW): | 8192*tREFI |
Maximum Activate Count (MAC): | Unlimited MAC |
DRAM VDD 1,20 V operable/endurant: | Yes/Yes |
Intel Extreme Memory Profiles
Profiles Revision: 2.0 |
Profile 1 (Certified) Enables: Yes |
Profile 2 (Extreme) Enables: No |
Profile 1 Channel Config: 1 DIMM/channel |
XMP Parameter | Profile 1 | Profile 2 |
Speed Grade: | DDR4-3200 | N/A |
DRAM Clock Frequency: | 1600 MHz | N/A |
Module VDD Voltage Level: | 1,35 V | N/A |
Minimum DRAM Cycle Time (tCK): | 0,625 ns | N/A |
CAS Latencies Supported: | 20T,19T,18T,17T, 16T,15T,14T,13T, 12T,11T,10T,9T | N/A |
CAS Latency Time (tAA): | 16T | N/A |
RAS# to CAS# Delay Time (tRCD): | 18T | N/A |
Row Precharge Delay Time (tRP): | 18T | N/A |
Active to Precharge Delay Time (tRAS): | 36T | N/A |
Active to Active/Refresh Delay Time (tRC): | 54T | N/A |
Four Activate Window Delay Time (tFAW): | 36T | N/A |
Short Activate to Activate Delay Time (tRRD_S): | 6T | N/A |
Long Activate to Activate Delay Time (tRRD_L): | 9T | N/A |
Normal Refresh Recovery Delay Time (tRFC1): | 559T | N/A |
2x mode Refresh Recovery Delay Time (tRFC2): | 415T | N/A |
4x mode Refresh Recovery Delay Time (tRFC4): | 255T | N/A |
Show delays in nanoseconds |